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Samsung’s 6th-gen V-NAND has over 100 layers, 256GB SSDs now in production

By Ng Chong Seng - on 7 Aug 2019, 2:25pm

Samsung’s 6th-gen V-NAND has over 100 layers, 256GB SSDs now in production

(Image: Samsung.)

Samsung has today announced that it’s now mass producing 250GB SATA SSDs that use the company’s 6th-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND.

Obviously, Samsung is pretty proud of its latest 3D memory breakthrough. To be more specific, this 6th-gen V-NAND features the industry’s first 100+ layer single-tier design.


Utilizing Samsung’s unique ‘channel hole etching’ technology, the new V-NAND adds around 40-percent more cells to the previous 9x-layer single-stack structure. This is achieved by building an electrically conductive mold stack comprised of 136 layers, then vertically piercing cylindrical holes from top to bottom, creating uniform 3D charge trap flash (CTF) cells.

To reduce errors and read latencies as the height of the stack increases, Samsung says it has designed a speed-optimised circuit. This circuit allows the NAND chip to achieve a super-fast data transfer speed of below 450 microseconds (μs) for write operations and below 45μs for reads. Thanks to this design, Samsung says V-NAND solutions with over 300 layers (by mounting three stacks) and that don’t sacrifice performance or reliability are now possible.

For a start, Samsung is now making 250GB SATA SSDs based on this 6th-gen V-NAND for PC OEMs. But the company says it intends to offer 512Gb 3-bit V-NAND SSD and eUFS solutions in the second half of this year. It also expects to expand production of higher-speed and higher-capacity SSDs at its Pyeongtaek (Korea) campus starting next year.

Source: Samsung.