Samsung has developed its 3rd-gen 10nm-class DDR4 DRAM
Samsung has developed its 3rd-gen 10nm-class DDR4 DRAM
Samsung has developed its 3rd generation 10nm-class DDR4 DRAM without the use of extreme ultraviolet (EUV) lithography.
This 10nm-class (1z-nm) 8Gb DDR4 DRAM’s manufacturing process allows for better yields, more than 20% higher manufacturing productivity when compared to the previous generation. The mass production of the new memory chips will begin in the second half of 2019.
Samsung plans to target next-gen enterprise servers as well as high-end PCs that are slated for launch in 2020. The new DRAM chips will find their way into DRAM interfaces that include DDR5, LPDDR5 and GDDR6.
With more 1z-nm memory products in the pipeline, Samsung aims to consolidate its pole position in the “premium DRAM market for applications that include servers, graphics and mobile devices.”
Source: Samsung