The latest Snapdragon 835 chipset is built on Samsung's 10nm FinFET process

Keith Kressin, senior vice president, product management, Qualcomm Technologies Inc. and Ben Suh, senior vice president, foundry marketing, Samsung, show off the first 10 nanometer mobile processor, the Snapdragon 835, in New York at the Qualcomm Snapdragon Technology Summit. <br> Image source: Qualcomm

Samsung's great progress in the field of chipset development has paid off; it has collaborated with Qualcomm to manufacture its latest Snapdragon 835 processor using its 10-nanometer (nm) FinFET process.

Compared to the existing Snapdragon 820 chipset, the Snapdragon 835 has a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption. As it has a smaller footprint, OEMs who use the Snapdragon 835 have more usable space inside their devices to support bigger batteries or thinner designs.

The Snapdragon 835 also supports Qualcomm's latest generation of fast charging, Quick Charge 4. It is stated to extend smartphone use by at least five hours with just five minutes of charging. You can expect up to 20% faster charging and up to 30% higher efficiency compared to Quick Charge 3.0. It also supports USB Type-C and USB-PD (USB power delivery).

Qualcomm expects the Snapdragon 835 to ship in commercial devices in the first half of 2017.

Source: Qualcomm (1) (2) (3)