Intel Announces 22nm 3D Transistors
It has been hailed by Intel as one of its most significant technology announcement of the year. The chip giant has just revealed a breakthrough 3D transistor design that puts it in a good position in the SoC arena.
Intel's big thing for the year has been revealed - a breakthrough in transistor design that significantly increases power efficiency while improving performance. It also happens to alleviate the leakage issue that becomes more crucial as transistors shrink further. Intel's 22nm Tri-Gate transistor is the answer and it will first used in the upcoming Ivy Bridge processors that Intel will be launching next year.
AnandTech - A 3D Tri-Gate transistor looks a lot like the planar transistor but with one fundamental change. Instead of having a planar inversion layer (where electrical current actually flows), Intel's 3D Tri-Gate transistor creates a three-sided silicon fin that the gate wraps around, creating an inversion layer with a much larger surface area.
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