Samsung Announces DDR4 DRAM, Based on 30nm Fabrication Process


Samsung Announces DDR4 DRAM, Based on 30nm Fabrication Process

Samsung has announced the development of DDR4 DRAM modules based on the 30nm manufacturing process. Claiming their feat to be first in the industry, the DDR4 DRAM module is able to achieve higher data transfer rates, with lower power requirements.

According to Samsung, their DDR4 DRAM module is able to transfer up to 2.133Gbps (gigabit per second) at 1.2V; while a typical DDR3 DRAM module, operating at 1.2V and 1.5V respectively, is able to transfer data up to a maximum of 1.6Gbps.

Due to its adaption of Pseudo Open Drain (POD) technology, the DDR4 DRAM module consumes "half the electric current" of its DDR3 counterpart while reading and writing data. Now, Samsung plans to work with a number of server manufacturers "to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year."

(Source: Samsung)

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