Micron Technology has just announced the first shipment of their 2GB Hybrid Memory Cube (HMC) engineering samples. They are touted to improve performance over standard DDR3 and DDR4 DRAM while simultaneously reducing power consumption.
According to the company, their HMC device is "a 2GB memory cube that is composed of a stack of four 4Gb DRAM die." It has a memory bandwidth of 160GB/s, which is roughly ten times more than a DDR3-2133 memory module. At the same time, the device consumes 70% less energy per bit than existing technologies. HMC devices are targeted at "applications requiring high-bandwidth access to memory, including data packet processing, data packet buffering or storage, and computing applications such as processor accelerators."
In the pipeline are 4GB HMC engineering samples that will be made available in early 2014. The volume production of both 2GB and 4GB HMC devices are slated to commence later in the same year. Micron expects its HMC devices to gain market traction in 5 years' time. For the full release, please head over here.
(Source: Micron Technology)