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GlobalFoundries Unveils FinFET Transistor Architecture Optimized for Next Gen Mobile Devices
By Joy Hou - on 21 Sep 2012, 11:15am

GlobalFoundries Unveils FinFET Transistor Architecture Optimized for Next Gen Mobile Devices

GlobalFoundries has launched a new technology designed for the expanding mobile market. The 14nm-XM offering will offer customers the performance and power benefits of three-dimensional "FinFET" transistors with less risk and a faster time-to-market, helping the fabless ecosystem enable a new gen of smart mobile devices.

The XM stands for "eXtreme Mobility", and it is optimized for mobile SoC (system-on-chip) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver 40-60% improvement in battery life when compared to today's two-dimensional planar transistors at the 20nm node.

The 14nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET device combined with elements of GLOBALFOUNDRIES’ 20nm-LPM process, which is well on its way to production. Leveraging the maturity of the 20nm-LPM technology will enable a smooth transition for customers looking to tap the benefits of FinFET SoCs as soon as possible.

Source: GlobalFoundries


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