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Samsung has started to mass produce 128GB DDR4 memory modules with TSV technology

By Wong Chung Wee - on 30 Nov 2015, 1:11pm

Samsung has started to mass produce 128GB DDR4 memory modules with TSV technology

(Image source: Samsung)

According to a Businesswire report, Samsung has started to mass produce 128GB DDR4 memory modules by using through-silicon via (TSV) technology. In October last year, we reported the company had already begun using 20nm, 8Gb memory chips for the mass production of 32GB DDR4 memory modules.

Samsung has extended the use of these chips to manufacture 128GB DDR4 memory modules for the mass market. However, these high-end components are targeted at enterprise-level computing applications in data centers and server farms. The 128GB DDR4 memory module is made up of 144 DDR4 chips, which are grouped into 36, 4GB DRAM packages. Each 4GB package comprises four 8-gigabit (Gb) chips that are assembled with TSV technology. Samsung expects itself to maintain its lead as it plans to introduce TSV DRAM with higher performance. Currently, the 8Gb memory chip has a data transfer rate per pin of 2,400Mbps, and Samsung plans to up the ante by introducing 2,667Mbps and 3,200Mbps versions. This is to meet the ever-increasing memory bandwidth needs of the enterprise computing market segment.

(Source: Samsung via Businesswire)

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